矽源特HYG025N04NA1C2是40V，190A的N沟道MOS.提供PDFN8L(5x6)封装。

矽源特HYG025N04NA1C2概述：

矽源特HYG025N04NA1C2是电压40VBalancer，电流190A的N沟道MOSFET,40V/190A,R DS(ON) = 1.4mΩ(typ.)@V GS = 10V,100%Avalanche Tested, Reliable and Rugged,Halogen-Free Devices vailable,

矽源特HYG025N04NA1C2丝印：C2/G025N04/XYMXXXXXXBalancer。

矽源特HYG025N04NA1C2提供PDFN8L(5x6)封装Balancer。

矽源特HYG025N04NA1C2特性：

40V/190A

RDS(ON) = 1.4mΩ(typ.)@V GS = 10V

100%Avalanche Tested

Reliable and Rugged

Halogen-Free Devices Available

矽源特HYG025N04NA1C2丝印：C2/G025N04/XYMXXXXXX

矽源特HYG025N04NA1C2提供PDFN8L(5x6)封装

矽源特HYG025N04NA1C2应用：

Load Switch

Lithium battery protect board

矽源特HYG025N04NA1C2典型应用电路及封装图：

矽源特HYG025N04NA1C2典型应用电路及封装图